정현준 교수

Cu-based p-type semiconducting oxides have been sought for water-reduction photocathodes to enhance the energy-conversion efficiency in photoelectrochemical cells. CuBi₂O₄ has recently attracted notable attention as a new family of p-type oxides, based on its adequate band gap. Although the identification of a major defect structure should be the first step toward understanding the electronic conduction behavior, no direct experimental analysis has been carried out yet. Usi

In this work, we studied a fluorite structure oxides: Yttria stabilized zirconia, (YSZ); Gd doped CeO 2 (GDC); erbia stabilized Bi 2 O 3 (ESB); Zr doped erbia stabilized Bi 2 O 3 (ZESB); Ca doped erbia stabilized Bi 2 O 3 (CESB) in the temperature range of 250 to 600 o C using electrochemical impedance spectroscopy (EIS). As is well known, grain boundary blocking effect was observed in YSZ and GDC. However, there is no grain boundary effect on ESB, ZESB, and CESB. The Nyquist plots of these mate

Cu-based p-type semiconducting oxides have been investigated for their potential as water-reduction photocathodes in order to enhance energy conversion efficiency in photoelectrochemical cells. Among these oxides, CuBi 2 O 4 has recently gained significant attention as a promising candidate for converting light energy into electrochemical reactions because of its good light absorption property with an adequate bandgap. Despite the importance of identifying the major defect structure to comprehen