신형철 교수

Capacitive touch-screen technology introduces new concepts to user interfaces, such as multi-touch, pinch zoom-in/out gestures, thus expanding the smartphone market. However, capacitive touch-screen technology still suffers from performance degradation like a low frame scan rate and poor accuracy, etc. One of the key performance factors is the immunity to external noise, which intrudes randomly into the touch-screen system. HUM, display noise, and SMPS are such noise sources. The main electrical

The plasma charging stress can be quantified sensitively using differential pair circuits as well as MOSFETs. We have developed a quantitative model for thin oxide plasma charging damage by examining the oxide thickness dependence of charging current. The model predicts the oxide thickness dependence of plasma charging successfully. A quantitative model of protection diodes for wafer charging effect on future thinner oxides is also presented.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML"

This paper presents an analytical noise model for the drain thermal noise, the induced gate noise, and their correlation coefficient in deep-submicron MOSFETs, which is valid in both linear region and saturation region. The impedance field method was used to calculate the external drain thermal noise current. The effect of channel length modulation was included in the analytical equation. The noise behavior of MOSFETs with decreasing channel length was successfully predicted from our model.

이상의 '아해'는 식민통치와 공모하고 있는 오이디푸스적 권력의 사생아들이다. 혹은 그 권력의 날카로운 반영이다. 그리고 이에 대한 이상의 전략은 사회적·가족적 재생산을 담당하는 어른이 되기를 포기하는 것이다. 노동하지 않고, 섹스하지 않는 주체, 즉 '무기체 되기'.그러나 이상의 보다 적극적인 전략은 유기체에서 무기체로의 전신(轉身)에 있는 것이 아니다. 이상의 가장 독창적인, 그리고 가장 문학적인 전략은 다름 아니라 이상의 '발명', 자연인 김해경에서 문학인 이상으로의 탈출이다. 이는 단지 김해경이 '李箱'이라는 필명을 사용했다는 차원의 이야기가 아니다. 이상은 '李箱'이라는 이름으로 완전히 다른 삶을 도모했었다. 텍스트에서 '이상'이라는 이름을 노출시키면서 그가 겨냥했던 것은, 그 조각조각 나뉘어진 텍스트(text)들을 모아서 말 그대로 하나의 직물(texture)을 짜는 것이었다. 그것은 '이상'이라는 '텍스트'를 만들어, '이상'이라는 '삶'을 구성하는 작업이다. '이상'이라

Misunderstanding apparent activation energy ( E aa ) can cause serious error in lifetime predictions. In this paper, the E aa is investigated for sub 20 nm NAND flash memory. In a high-temperature (HT) regime, the interface trap ( N it ) recovery mechanism has the greatest impact on the charge loss. However, the values of E aa and E a (Nit) have a wide difference. Also, the lifetime of the device cannot be estimated by the Arrhenius model due to the E aa roll-off behavior. For the first time, we

Random telegraph noise (RTN) in various devices such as nano-wire, recessed-channel and high-k FET has been studied through various measurement techniques and analysis. By taking into account both effects which are variation of surface potential and poly depletion voltage drop, we proposed a new method for extracting both locations (x <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</inf> , y <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmln

Oxide shorts density obtained from large test capacitors is found to be higher than that in a multiple of separated small capacitors having the same total oxide area. The observed difference in failure rate is explained by the different oxide charging currents for the weak spots in the two devices during plasma processing. This experiment can explain the observed lower density of shorts after plasma processing in ICs, which is composed of many small devices, than in test structures which are lar

A new method for extracting pi-type substrate resistance model of RF MOSFETs based on 3-port measurement is presented. Using NQS and macro-model with extracted substrate components, it is verified that the new substrate resistance model is accurate. Also, temperature dependent macro model is developed. An analytical high frequency thermal noise model for short-channel MOSFETs which covers all operating regions is developed. A simple wide-band model for on-chip inductors on silicon is presented.

The string (STR) with various geometrical profiles in 3-D NAND flash cause the degradation of program efficiency. This is because the program speed differences among WL layers within the STR are caused by the geometrical properties observed through measurement results. In this work, we propose the method to reduce the program speed differences based on a word-line (WL) grouping in terms of threshold voltage (Vth) distribution to compensate for the program start voltage (Vstart). To address vario