이인환 교수

We report a systematic study accomplished with a series of undoped and Si-doped GaN epilayers grown on sapphire (0001) with the carrier concentration of 4.0×1017−1.6×1019 cm−3 in order to investigate the evolution of stress relaxation and yellow luminescence by Si incorporation. As the Si doping becomes higher, the bound exciton peaks are gradually shifted to lower energy due to relaxation of the thermal residual stress with the linear coefficient of ΔE/Δσ∥=42 meV/GPa. The present results show t

SnO 2 recently has attracted particular attention as a powerful buffer layer for organic optoelectronic devices due to its outstanding properties such as high electron mobility, suitable band alignment, and high optical transparency. Here, we report on facile low-temperature solution-processed SnO 2 nanoparticles (NPs) in applications for a cathode buffer layer (CBL) of inverted organic solar cells (iOSCs). The conduction band energy of SnO 2 NPs estimated by ultraviolet photoelectron spectrosco

We investigate the optical properties of two sets of Si-doped GaN epitaxial layers with different degree of compensation. The electron concentration dependence of the band-gap energy measured by photoluminescence is interpreted as band-gap narrowing effect and evaluated by a simple relation. The photoluminescence peak positions of heavily compensated samples are shifted downward with respect to those of moderately compensated samples, and the down shift becomes larger at higher electron density.

This research focused on extending the applications of fused deposition modeling (FDM) by extrusion and deposition of low melting temperature metal alloys to create three-dimensional metal structures and single-layer contacts which may prove useful for electronic interconnects. Six commercially available low melting temperature solder alloys (Bi36Pb32Sn31Ag1, Bi58Sn42, Sn63Pb37, Sn50Pb50, Sn60Bi40, Sn96.5Ag3.5) were tested for the creation of a fused deposition modeling for metals (FDMm) system

We report the Si-doping-induced relaxation of residual stress in GaN epitaxial layers grown on (0001) sapphire substrate by the metalorganic vapor phase epitaxy technique. Micro-Raman spectroscopy is used to assess stress situation in the films with systematically modulated doping concentration from 4.0×1017 up to 1.6×1019 cm−3. As the Si-doping concentration increases, a monotonic decrease of the E2 phonon frequency is observed, which signifies gradual relaxation of the stress in the film. The