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심재윤 교수

Jae-Yun Sim

포항공과대학교 전자전기공학과 · 공학

연구실 소개

심재윤 교수의 연구실은 고속 데이터 전송을 위한 저전력·고성능 트랜ceiver 및 동기 회로 기술에 중점을 두고 있으며, 특히 고속 메모리 인터페이스와 웨이브라이인 전송 환경에서의 전자기 간섭(EMI) 저감, 코herently된 신호 인식 및 잡음 저항성 향상을 위한 시간 기반 신호 처리 기술을 핵심으로 연구하고 있습니다. 반도체 공정 기술에 최적화된 TDC, TIA, Equalizer 등 핵심 회로 설계를 통해 9 Gb/s 이상의 고속 전송을 실현하고 있으며, 실리콘 기반의 실험적 검증을 통해 실용성과 신뢰성을 확보하고 있습니다. 특히, 전력 소모를 최소화하면서도 높은 신호 정합도를 확보하는 고도화된 보정 및 보정 기반 회로 기술이 주요 특징입니다.

고속 인터페이스시간 기반 수신기저전력 설계EMI 저감신호 무결성

연구 현황

논문 수
28
총 인용 수
296
최근 5년 논문
14
주요 분야
공학

연구 성과 추이

표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.

5개년 연도별 논문 게재 수
14총합
2015
2016
2017
2024
2025
5개년 연도별 피인용 수
76총합
20152016201720242025

주요 논문

15
1
논문|인용수 148·2010
A 1 GHz ADPLL With a 1.25 ps Minimum-Resolution Sub-Exponent TDC in 0.18 m CMOS
Seon‐Kyoo Lee, Young-Hun Seo, Hong‐June Park, Jae-Yoon Sim
SJR Q1IEEE Journal of Solid-State Circuits

An all-digital PLL for wireline applications is designed with a sub-exponent TDC which adaptively scales its resolution according to input time difference. By cascading 2× time amplifiers, the TDC efficiently generates the exponent-only information for fractional time difference. To improve linearity in a wide input range, a replica-based self-calibration scheme is applied to the time amplifier. The TDC, implemented in a 0.18 μm CMOS, shows the minimum resolution of 1.25 ps with a total conversi

Electrical and Electronic EngineeringEngineering
2
논문|인용수 23·2017
A Time-Based Receiver With 2-Tap Decision Feedback Equalizer for Single-Ended Mobile DRAM Interface
Il-Min Yi, Min-Kyun Chae, Seok-Hun Hyun, Seung-Jun Bae, Jung-Hwan Choi, Seong-Jin Jang, Byungsub Kim, Jae-Yoon Sim, Hong-June Park
SJR Q1IEEE Journal of Solid-State Circuits

A time-based (TB) receiver (RX) with a 2-tap TB decision feedback equalizer (DFE) is proposed for mobile DRAM interface. The TB RX consists of a voltage-to-time converter (VTC), a TB DFE, and a time comparator. The VTC converts the RX input voltage to a time difference between two VTC outputs by using the difference in clock-to-Q delays between two latches with different input offset voltages. The TB DFE inserts an additional delay to one of the two VTC outputs and bypasses the other VTC output

Electrical and Electronic EngineeringEngineering
3
논문|인용수 15·2016
A Single-Ended Parallel Transceiver With Four-Bit Four-Wire Four-Level Balanced Coding for the Point-to-Point DRAM Interface
Soo-Min Lee, Ji-Hoon Lim, Il-Min Yi, Young-Jae Jang, Hae-Kang Jung, Kyunghoon Kim, Daehan Kwon, Byungsub Kim, Jae-Yoon Sim, Hong-June Park
SJR Q1IEEE Journal of Solid-State Circuits

A four-bit four-wire four-level (4B4W4L) single-ended parallel transceiver for the point-to-point DRAM interface achieved a peak reduction of ~10 dB in the electromagnetic interference (EMI) H-field power, compared to a conventional 4-bit parallel binary transceiver with the same output driver power of transmitter (TX) and the same input voltage margin of receiver (RX). A four-level balanced coding is used in this work to minimize the simultaneous switching noise at TX, to utilize a differential

Electrical and Electronic EngineeringEngineering
4
논문|인용수 13·2015
A 40 mV-Differential-Channel-Swing Transceiver Using a RX Current-Integrating TIA and a TX Pre-Emphasis Equalizer With a CML Driver at 9 Gb/s
Il-Min Yi, Soo-Min Lee, Seung-Jun Bae, Young‐Soo Sohn, Jung-Hwan Choi, Seong-Jin Jang, Byungsub Kim, Jae-Yoon Sim, Hong-June Park
SJR Q1IEEE Transactions on Circuits and Systems I Regular Papers

A differential transceiver achieves a 40 mVppd channel signal-swing, a 9 mVppd receiver (RX) input sensitivity, and a 0.59 pJ/b energy efficiency at 9 Gb/s with a 12" FR-4 channel. A current-integrating TIA (CI-TIA) is proposed as a RX pre-amplifier to enhance the RX input sensitivity by increasing the voltage gain of the CI-TIA to around 18 at 9 Gb/s. The RX circuit alone works up to 11 Gb/s with a 1" FR-4 channel. A voltage-mode pre-emphasis equalizer is combined with a current-mode logic (CML

Electrical and Electronic EngineeringEngineering
5
논문|인용수 12·2012
A Transmitter to Compensate for Crosstalk-Induced Jitter by Subtracting a Rectangular Crosstalk Waveform From Data Signal During the Data Transition Time in Coupled Microstrip Lines
Hae-Kang Jung, Il-Min Yi, Soo‐Min Lee, Jae-Yoon Sim, Hong-June Park
SJR Q1IEEE Journal of Solid-State Circuits

A single-ended transmitter (Tx) is proposed to compensate for the crosstalk-induced jitter (CIJ) of coupled microstrip lines by subtracting a mimicked crosstalk waveform from data signal at Tx during the data transition time, depending on the data transition of an adjacent line. Since the CIJ component is proportional to the time derivative of data signal, the mimicked crosstalk waveform subtracted at Tx cancels the CIJ at receiver (Rx) for the linearly changing data signal with time. As a by-pr

Electrical and Electronic EngineeringEngineering
6
논문|인용수 11·2012
A 5Gb/s single-ended parallel receiver with adaptive FEXT cancellation
Seon‐Kyoo Lee, Hyunsoo Ha, Hong-June Park, Jae-Yoon Sim

In high-speed communication with a data rate of multi-Gb/s, the crosstalk noise induced by electromagnetic coupling is becoming a significant noise source, requiring careful considerations in the design of transceiver circuits as well as physical dimension of the transmission lines. When an input voltage of V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">i</inf> is applied to one of two parallel transmission lines, the induced voltages at the vict

Electrical and Electronic EngineeringEngineering
7
논문|인용수 11·2014
A 40-mV-Swing Single-Ended Transceiver for TSV with a Switched-Diode RX Termination
Il-Min Yi, Soo-Min Lee, Seung-Jun Bae, Young‐Soo Sohn, Jung-Hwan Choi, Byungsub Kim, Jae-Yoon Sim, Hong-June Park
SJR Q1IEEE Transactions on Circuits & Systems II Express Briefs

A switched-diode termination (SDT) is proposed to implement a low-power transceiver circuit for on-chip single-ended signaling through a through-silicon via (TSV). The channel signal swing is limited to 40 mV by the SDT to reduce the transmitter (TX) power. An inverter-cascade amplifier is used to reduce the receiver (RX) power. The SDT consists of an nMOS diode and a pMOS diode, which are connected in a series between power rails through the RX input node. Only one of these two diodes is switch

Electrical and Electronic EngineeringEngineering
8
논문|인용수 10·2013
A 0.45V 423nW 3.2MHz multiplying DLL with leakage-based oscillator for ultra-low-power sensor platforms
Dong‐Woo Jee, Dennis Sylvester, David Blaauw, Jae-Yoon Sim

Emerging demands on ultra-low-power wireless sensor platform have presented challenges for nano-watt design of various circuit components. Clock management unit, as an essential block, is one of the most actively researched blocks. It is required to distribute various frequency ranges for energy-optimal operation, e.g., Hz for internal timer [1], kHz for global clock [2], and MHz for fast data transmission or intensive signal processing [3]. However, free-running oscillators are seriously affect

Electrical and Electronic EngineeringEngineering
9
논문|인용수 8·2017
23.7 A time-based receiver with 2-tap DFE for a 12Gb/s/pin single-ended transceiver of mobile DRAM interface in 0.8V 65nm CMOS
Il-Min Yi, Min-Kyun Chae, Seok-Hun Hyun, Seung-Jun Bae, Jung-Hwan Choi, Seong-Jin Jang, Byungsub Kim, Jae-Yoon Sim, Hong-June Park

Single-ended transceivers are mostly used for DRAM interfaces to reduce pin count. A low-supply transceiver is preferred, especially for mobile DRAM interfaces, for low-power consumption while maintaining a high-speed interface for transmission of image data [1]. To reduce transmitter power in single-ended transceivers, both the supply voltage and the signal swing are reduced: 0.8V and 200mV, or below [2]. However, with a small signal swing the low-supply voltage limits the maximum data rate tha

Electrical and Electronic EngineeringEngineering
10
논문|인용수 7·2012
An on-chip TSV emulation using metal bar surrounded by metal ring to develop interface circuits
Il-Min Yi, Seung-Jun Bae, Young‐Soo Sohn, Jae-Yoon Sim, Hong‐June Park

TSV is considered to be the next industry standard for chip interconnects because of huge number of I/O pins and high frequency capability. However, TSV is not readily available to develop interface circuits. An on-chip TSV emulation is presented by using a horizontal metal bar surrounded by a horizontal metal ring on a silicon chip with a 0.13-µm CMOS process. The resistance and capacitance of emulated TSVs and the substrate resistance are extracted as an HSPICE W-element model through measurem

Electrical and Electronic EngineeringEngineering
11
논문|인용수 6·2024
A Cryo-CMOS 64-Channel Bias Generator IC for Surface Ion Trap
Sung Bin Park, Seokchan Song, Keumhyun Kim, Hyegoo Lee, Moonjoo Lee, Jae-Yoon Sim

A high-voltage DC bias generator chip is designed to address the scalability challenges of ion trap systems. The circuit employs a single digital-to-analog converter (DAC) to generate 64 channel outputs using time-division multiplexed driving. The chip, fabricated using 180 nm BCDMOS process, produces 64 DC voltages in a range of -10V to 16V at 4 Kelvin(4K) with an 11.06 bit resolution. The chip is verified with a trap of ${ }^{40} \mathbf{C a}^{+}$ ions, showing successful operations of capturi

Materials ChemistryMaterials Science
12
논문|인용수 5·2024
A 246-fJ/b 13.3-Tb/s/mm Single-Ended Current-Mode Transceiver with Crosstalk Cancellation for Shield-Less Short-Reach Interconnect
Jaeho Lee, Kyongsu Lee, Jae-Yoon Sim, Seon‐Kyoo Lee

This paper presents a 20-Gb/s/line current-mode transceiver for dense short-reach on-chip interconnect. The transceiver achieves a systematic crosstalk cancellation (XTC) by balancing the crosstalk induced by capacitive and inductive coupling. As a receiver frontend, a current-sensing amplifier is designed with an optimum input resistance value for XTC. Without any additional circuits for XTC and equalization, the transceiver implemented in a 40nm CMOS technology shows an energy efficiency of 24

Electrical and Electronic EngineeringEngineering
13
논문|인용수 5·2013
A QDR-Based 6-GB/s Parallel Transceiver With Current-Regulated Voltage-Mode Output Driver and Byte CDR for Memory Interface
Seon‐Kyoo Lee, Byungsub Kim, Hong-June Park, Jae-Yoon Sim
SJR Q1IEEE Transactions on Circuits & Systems II Express Briefs

This brief presents an 8-bit parallel transceiver for low-power memory interface with a current-regulated voltage-mode driver and a clock and data recovery performing both bit recovery and byte alignment. Sharing a current source by output drivers enables voltage swing control without any regulator circuit while holding the benefits of low-power voltage-mode driving. In the receiver, with only one phase rotator in a globally shared phase-locked loop, a narrow-range delay line in each deskewing p

Electrical and Electronic EngineeringEngineering
14
논문|인용수 4·2013
A Channel Model of Scaled RC-dominant Wires for High-Speed Wireline Transceiver Design
최민수, 심재윤, 박홍준, 김병섭
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE

This paper explains modeling and analysisof RC-dominant wires for high-speed wirelinetransceiver design. A closed form formula derivedfrom telegrapher’s equation accurately describes afrequency response of an RC-dominant wire, yet it issimple and intuitive for designers to easily understanddesign trade-offs without a complex numericalequation solver. This paper explains how the model isderived and how it can help designers in exampletransceiver designs.

15
논문|인용수 4·2014
A Single-Stage 37 dB-Linear Digitally-Controlled Variable Gain Amplifier for Ultrasound Medical Imaging
조성은, 엄지용, 김병섭, 심재윤, 박홍준
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE

This paper presents a variable gain amplifier (VGA) for an analog front-end (AFE) of ultrasound medical imaging. This VGA has a closed-loop topology and shows a 37 dB-linear characteristic with a single-stage amplifier. It consists of an op-amp, a non-binary-weighted capacitor array, and a gain-control block. This non-binary-weighted capacitor array reduces the required number of capacitors and the complexity of the gain-control block. The VGA has been fabricated in a 0.35 m CMOS process. This

대표 연구 분야

Electrical and Electronic EngineeringMaterials Chemistry

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