박지우 교수

In this work, we present a learning-based approach to chip placement, one of the most complex and time-consuming stages of the chip design process. Unlike prior methods, our approach has the ability to learn from past experience and improve over time. In particular, as we train over a greater number of chip blocks, our method becomes better at rapidly generating optimized placements for previously unseen chip blocks. To achieve these results, we pose placement as a Reinforcement Learning (RL) pr

Electromigration (EM) is a critical problem for interconnect reliability of modern IC design, especially as the feature size becomes smaller. In 3D IC technology, the EM problem becomes more severe due to drastic dimension mismatches between metal wires, through-silicon-vias (TSVs), and landing pads. Meanwhile, the thermo-mechanical stress due to TSV can further interact with EM and shorten the lifetime of the structure. However, there is very little study on EM issues with respect to TSV for 3D

Electromigration (EM) is a critical problem for interconnect reliability of modern integrated circuits (ICs), especially as the feature size becomes smaller. In three-dimensional (3D) IC technology, the EM problem becomes more severe due to drastic dimension mismatches between metal wires, through silicon vias (TSVs), and landing pads. Meanwhile, the thermo-mechanical stress due to the TSV can also cause reduction in the failure time of wires. However, there is very little study on EM issues tha

The 3D IC integration using through-silicon-vias (TSV) has gained tremendous momentum recently for industry adoption. However, as TSV involves disruptive manufacturing technologies, new modeling and design techniques need to be developed for 3D IC manufacturability and reliability. In particular, TSVs in 3D IC may cause significant thermal mechanical stress, which not only results in systematic mobility/performance variations, but also leads to mechanical reliability concerns such as interfacial

3D integration has new manufacturing and design challenges such as timing corner mismatch between tiers and device variation due to Through Silicon Via (TSV) induced stress. Timing corner mismatch between tiers is caused because each tier is manufactured in independent process. Therefore, inter-die variation should be considered to analyze and optimize for paths spreading over several tiers. TSV induced stress is another challenge in 3D Clock Tree Synthesis (CTS). Mobility variation of a clock b

3D integration has new manufacturing and design challenges such as timing corner mismatch between tiers and device variation due to Through Silicon Via (TSV) induced stress. Timing corner mismatch between tiers is caused because each tier is manufactured in independent process. Therefore, inter-die variation should be considered to analyze and optimize for paths spreading over several tiers. TSV induced stress is another challenge in 3D Clock Tree Synthesis (CTS). Mobility variation of a clock b

Electromigration (EM) in power distribution networks (PDNs) is a major reliability issue in 3-D ICs. While the EM issues of local vias and through-silicon-vias (TSV) have been studied separately, the interplay of TSVs and conventional local vias in 3-D ICs has not been well investigated. This co-design is necessary when the die-to-die vertical power delivery is done using both TSVs and local interconnects. In this paper, we model EM for PDNs of 3-D ICs with a focus on multiscale via (MSV) struct

As the feature size shrinks, electromigration (EM) becomes a more critical reliability issue in IC design. EM around the via structures accounts for much of the reliability problems in ICs, and the insertion of redundant vias can mitigate the adverse effect of EM by reducing current density. In this paper, we model EM reliability of redundant via structures, considering current distribution with different via layouts. Based on our EM model, we choose redundant via layouts that can increase the E

Electromigration (EM) in power distribution network (PDN) is a major reliability issue in 3D ICs. While the EM issues of local vias and through-silicon-vias (TSV) have been studied separately, the interplay of TSVs and conventional local vias in 3D ICs has not been well investigated. This co-design is necessary when the die-to-die vertical power delivery is done using both TSVs and local interconnects. In this work, we model EM for PDN of 3D ICs with a focus on multi-scale via structure, i.e., T

Electromigration (EM) in power distribution network (PDN) is a major reliability issue in 3D ICs. While the EM issues of local vias and through-silicon-vias (TSV) have been studied separately, the interplay of TSVs and conventional local vias in 3D ICs has not been well investigated. This co-design is necessary when the die-to-die vertical power delivery is done using both TSVs and local interconnects. In this work, we model EM for PDN of 3D ICs with a focus on multi-scale via structure, i.e., T

Electromigration (EM) has become a key reliability concern for nanometer IC designs. For 3D ICs, higher current density/temperature and TSV-induced thermal mechanical stress further exacerbate the EM issue compared to 2D ICs. In this paper, we analyze the root causes of EM for 3D IC signal nets, with consideration of current density, temperature, and TSV-induced thermal mechanical stress. We develop compact EM models for both DC and AC signal nets using detailed finite-element-analysis (FEA) and

In this paper, we propose a frequency control method for a resonant clock distribution scheme using a bond-wire inductor. The resonant clock distribution using the embedded planes in a package and an inductive load suppresses the clock source jitter and significantly reduces the clock skew by replacing the cascaded repeaters of a conventional on-chip clock distribution. The resonant frequency can be controlled by the inductance of the load and the size of cavity planes. We use a bond-wire induct

SiP (System-in-Package) solution realizes an extremely small sized system which is suitable for mixed-signal mobile applications. However, integration of digital and RF dies with a number of interconnections between them within limited area can cause noise coupling from digital circuits to RF circuits. In this paper, a fully operating T-DMB (Terrestrial Digital Multimedia Broadcasting) system is implemented in a form of a 3-D (three-dimensional) SiP by stacking dies, on which a series of design