안종열 교수

Multilayer graphene was synthesized on an atomically thin silicon oxynitride (SiON) layer. This SiON layer was itself grown on a SiC(0001) wafer. The number of graphene layers was approximately controlled through the manipulation of argon partial pressure and exposure time. Both SiC and Si wafers are standard and commercially available substrates in the semiconductor industry, underscoring the importance of growing graphene layers on these wafers without the need for a transfer process. The mult

We revisit the interfacial structure underlying the growth of graphene quasicrystals on SiC, previously realized by a twisted bilayer graphene with a twist angle of 30°. While the formation of graphene quasicrystals via an h-BN-mediated growth process has been established, the microscopic nature of the interface between the overlayer and the SiC substrate has remained unclear. Using a combination of low-energy electron diffraction, angle-resolved photoemission spectroscopy, and core-level X-ray