정상섭 교수

Permanent magnet (PM)-type linear oscillating actuators (LOAs) are used in various types of equipment owing to their high efficiency, thrust density, and good control performance. However, the disadvantage of the LOA is the side force inevitably generated by the magnetic coupling structure of the stator and the PM mover. Therefore, side force reduction is essential at the design stage. This study manages the optimal side force design of a movable PM-type linear actuator using response surface me

A new periodic two-step process composing SiO2 etching with high bias radio frequency (rf) power and fluorocarbon deposition with low bias rf power was studied for the highly selective etching of SiO2 to photoresist (PR). In this experiment, the time scale of each step is longer than the conventional time-modulation technique in order to maximize the protection layer on PR and prevent the etch stop. Many works have focused on the gaseous chemical species especially CF2 radicals for selective sur

Abrupt changes in sidewall profile were induced in pulsed plasma etch process for high aspect ratio isolation trench structuring. Impacts of operational parameters when applying pulsed RF bias power were investigated. Silicon sidewall chipping problems were removed mainly by increasing bias power level and pulse frequency. The chemical sensitivity of O2 has shown decreased in extremely narrow trench spaces of high pattern density

Magnetic Random Access Memory (MRAM) has emerged as the leading candidate for future universal memory due to its non-volatility, excellent endurance and read/write performance. The magnetic tunnel junction (MTJ) is a data storage element in MRAM and is basically composed of two ferromagnetic layers separated by the magnesium oxide (MgO) tunnel barrier. MgO between two ferromagnetic layers was adopted to enlarge the resistance difference between two kinds of magnetic arrangements by tunneling cur

Abstract not Available.

Abstract not Available.