강성준 교수

We developed means to form multilayer superstructures of large collections of single-walled carbon nanotubes (SWNTs) configured in horizontally aligned arrays, random networks, and complex geometries of arrays and networks on a wide range of substrates. The approach involves guided growth of SWNTs on crystalline and amorphous substrates followed by sequential, multiple step transfer of the resulting collections of tubes to target substrates, such as high-k thin dielectrics on silicon wafers, tra

Highly transparent phototransistors that can detect visible light have been fabricated by combining indium-gallium-zinc oxide (IGZO) and quantum dots (QDs). A wide-band-gap IGZO film was used as a transparent semiconducting channel, while small-band-gap QDs were adopted to absorb and convert visible light to an electrical signal. Typical IGZO thin-film transistors (TFTs) did not show a photocurrent with illumination of visible light. However, IGZO TFTs decorated with QDs showed enhanced photocur

Intrinsically stretchable light-emitting materials are crucial for skin-like wearable displays; however, their color range has been limited to green-like yellow lights owing to the restricted stretchable light-emitting materials (super yellow series materials). To develop skin-like full-color displays, three intrinsically stretchable primary light-emitting materials [red, green, and blue (RGB)] are essential. In this study, we report three highly stretchable primary light-emitting films made fro

We report the use of graphene as a highly transparent conductive film in liquid-crystal displays (LCDs). Graphene films were synthesised via chemical vapour deposition, transferred onto glass substrates, and then used to fabricate typical twisted nematic LCD cells. LCD cells using graphene as transparent electrodes exhibited optical transmittances 7.7% higher than LCD cells fabricated using conventional conducting layers based on indium tin oxide (ITO) films. The device characteristics of LCD ce

Abstract Dual-functional quantum-dots light emitting diodes (QLEDs) have been fabricated using solution processable vanadium oxide (V 2 O 5 ) hole injection layer to control the carrier transport behavior. The device shows selectable functionalities of photo-detecting and light-emitting behaviors according to the different operating voltage conditions. The device emitted a bright green light at the wavelength of 536 nm, and with the maximum luminance of 31,668 cd/m 2 in a forward bias of 8.6 V.

We developed a method to reduce the persistent photoconductivity (PPC) effect of zinc oxide (ZnO) thin film transistors (TFTs) by sequential surface treatment, which includes preannealing/ultraviolet ozone/postannealing (PUP) treatments. Preannealing treatment improves the surface uniformity of the film and eliminates the residual solvent and contaminant molecules without affecting the zinc–oxygen bonds. The ultraviolet ozone (UVO) treatment reduces the oxygen vacancy and increases the amount of

Abstract Optoelectronic neuromorphic devices based on oxide semiconductors have been potentially investigated to mimic the functions of human visual synapses. However, the challenge comes from the wide bandgap characteristics of numerous oxide semiconductors, which restricts the response range of the device under ultra‐violet (UV) region. Strategies for widening the response range are mostly focused on artificially generating the defect states, however, most of them results in mimicking the tetr