이기용 교수

Transparent thin-film transistors (TTFTs) with amorphous InGaZnO (a-IGZO) channels have ben prepared by using a combinatorial thin-film synthesis approach. The In composition ratio, In(%)[= In×10 In+Zn+Ga(%)], of the channel of the TTFTs varied with position from 50% to 85%. This alowed us to study TTFTs characteristics as a function of channel composition. The mobility, the on-off ratio and the threshold voltage of the TTFTs varied from 0.2 cm/V·s to 13 cm/V·s, 3 × 100 to 8 × 107 and -24 to 20

The I-V characteristics of two terminal planar VO2 film devices are investigated as the devices undergo the current induced metal insulator transition (I-MIT). The I-MIT occured when the device resistivity reached ~7 Ucm, where metallic grains formed initial conductive current path within insulating matrix. The transition time needed for the I-MIT increased with increasing external resistance, REXT, connected to the device in series, i.e. ~390 ms (REXT ¼ 5 kU) to ~1400 ms (REXT ¼ 20 kU). The tra