김기수 교수
Kisoo Kim
경희대학교 생체의공학과 · 공학
연구실 소개
김기수 교수의 연구실은 광학 센서 및 반도체 에피택셜 성장 기반의 고성능 전자재료와 열치료 기술을 연구하고 있습니다. 특히, 섬유 기반 파이버 온도/변형 측정 센서의 정량적 모델링과 GaN, GaAs 등의 반도체 에피층에서의 잠재적 스트레인 및 결정 품질 제어 기법을 중심으로 연구를 전개하고 있으며, 이를 바탕으로 의료용 실시간 MRI 열측정 및 나노입자 유도 열치료 기술의 정밀화를 도모하고 있습니다. 특히, 열역학적 및 광학적 측정을 통한 스트레인 분석과 임상 적용 가능한 열치료 시스템의 설계에 초점을 맞추고 있습니다.
연구 현황
연구 성과 추이
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
주요 논문
15A model was developed for embedded intrinsic and extrinsic Fabry-Perot fiber optic sensors. This model relates the strains and the temperature changes in the material surrounding the sensor to the reflected light intensity. The model consists of three parts. Submodel I relates the temperature and the strains in the material to the temperature and the strains inside the sensor. Submodel 2 relates the temperature and the strains inside the sensor to the change in sensor length and to the changes i
We studied the effects of the growth rate of a GaN buffer layer grown on a GaN epilayer. It was found that this growth rate plays a key role in improving the quality of the GaN film on a sapphire substrate and an optimum growth rate exists that yields the best crystal quality. A GaN film grown on a buffer layer with the optimum growth rate of 18.3 nm/min has an electron Hall mobility of 539 cm2/V s and a dislocation density of approximately 2×108 cm−2. These improvements of GaN film qualities ar
Proton resonance frequency shift (PRFS) MR thermometry is the most common method used in clinical thermal treatments because of its fast acquisition and high sensitivity to temperature. However, motion is the biggest obstacle in PRFS MR thermometry for monitoring thermal treatment in moving organs. This challenge arises because of the introduction of phase errors into the PRFS calculation through multiple methods, such as image misregistration, susceptibility changes in the magnetic field, and i
Heteroepitaxial GaAs layers were grown on Si (001) substrates by metalorganic chemical vapor deposition. The tetragonal distortion induced by the lattice and the thermal expansion coefficient mismatches gives substantial effects on the acceptor energy level as well as the valence band structure. The biaxial tensile strain in GaAs layers is investigated using low-temperature photoluminescence. The origins of intrinsic exciton lines and carbon-related extrinsic lines observed in the photoluminesce
BACKGROUND: Capacitive radiofrequency (RF) hyperthermia suffers from excessive temperature rise near the electrodes and poorly localized heat transfer to the deep-seated tumor region even though it is known to have potential to cure ill-conditioned tumors. To better localize heat transfer to the deep-seated target region in which electrical conductivity is elevated by nanoparticle mediation, two-channel capacitive RF heating has been tried on a phantom. METHODS: We made a tissue-mimicking phanto
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