하경호 교수

Abstract Past research aimed at increasing the sensitivity of capacitive pressure sensors has mostly focused on developing dielectric layers with surface/porous structures or higher dielectric constants. However, such strategies have only been effective in improving sensitivities at low pressure ranges (e.g., up to 3 kPa). To overcome this well‐known obstacle, herein, a flexible hybrid‐response pressure sensor (HRPS) composed of an electrically conductive porous nanocomposite (PNC) laminated wit

Soft pressure sensors are critical components of e-skins, which are playing an increasingly significant role in two burgeoning fields: soft robotics and bioelectronics. Capacitive pressure sensors (CPS) are popular given their mechanical flexibility, high sensitivity, and signal stability. After two decades of rapid development, e-skins based on soft CPS are able to achieve human-skin-like softness and sensitivity. However, there remain two major roadblocks in the way for practical application o

High-performance wearable and implantable devices capable of recording physiological signals and delivering appropriate therapeutics in real time are playing a pivotal role in revolutionizing personalized healthcare. However, the mechanical and biochemical mismatches between rigid, inorganic devices and soft, organic human tissues cause significant trouble, including skin irritation, tissue damage, compromised signal-to-noise ratios, and limited service time. As a result, profuse research effort

Electrodermal activity (EDA) is a popular index of mental stress. State-of-the-art EDA sensors suffer from obstructiveness on the palm or low signal fidelity off the palm. Our previous invention of sub-micron-thin imperceptible graphene e-tattoos (GET) is ideal for unobstructive EDA sensing on the palm. However, robust electrical connection between ultrathin devices and rigid circuit boards is a long missing component for ambulatory use. To minimize the well-known strain concentration at their i

We present a method to determine junction temperature in GaN-based laser diodes (LDs) for simple, fast, and reliable characterization of thermal properties. The large change of forward operation voltage with temperature in GaN laser diodes is advantageously used to measure junction temperature. Using this method, we compare junction temperature of LD structures with different substrates and chip mounting methods. It is found that the junction temperature can be reduced considerably by employing

The sense of touch conveys critical environmental information, facilitating object recognition, manipulation, and social interaction, and can be engineered through haptic actuators that stimulate cutaneous receptors. An unfulfilled challenge lies in haptic interface technologies that can engage all the various mechanoreceptors in a programmable, spatiotemporal fashion across large areas of the body. Here, we introduce a small-scale actuator technology that can impart omnidirectional, superimposa

Abstract Tunable metasurfaces can change the optical properties of incident light at will such as amplitude, phase, and polarization in a time‐dependent fashion. Ultrafast switching speed and the ability for the pixel size reduction of the tunable metasurface can allow various applications such as light detection and ranging, interferometric sensors, and free space optical communications, to name a few. Although there have been successful demonstrations of the wavefront shaping using the tunable

We present photonics technology based on a bulk-Si substrate for cost-sensitive dynamic random-access memory (DRAM) optical interface application. We summarize the progress on passive and active photonic devices using a local-crystallized Si waveguide fabricated by solid phase epitaxy or laser-induced epitaxial growth on bulk-Si substrate. The process of integration of a photonic integrated circuit (IC) with an electronic IC is demonstrated using a 65 nm DRAM periphery process on 300 mm wafers t

An O-band DFB laser heterogeneously integrated on bulk-silicon platform is presented. A high wall plug efficiency of over 8% up to 70°C is achieved due to efficient heat dissipation from III/V active region to silicon platform. The single-mode operation is maintained in a wide current range with side-mode suppression ratio over 45dB. This result completes the optical device library suite for the bulk-silicon platform used in most semiconductor products.

Abstract The remarkable mechanical robustness and excellent electrical/thermal properties make graphene a promising candidate for future flexible, stretchable and bio-integrated electronics. In practice, many soft electronics such as the graphene electronic tattoos (GETs) demand the chemical vapor deposited (CVD) graphene to be supported by a deformable substrate. Moreover, various conductive overlayers need to directly laminate on graphene to make electrical contacts. To investigate the mechani

For the first time to our knowledge, we present a single-chip solution for a solid-state 2D beam scanner achieving 10-m light detection and ranging (LIDAR) operation at 20 frames per second (fps). The beam scanner is integrated with a fully functional 32-channel optical phased array (OPA), 36 optical amplifiers, and a tunable laser, all on a 7.5×3-mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> single chip fabricated using III-V-on-silico

For the first time, we demonstrate 40-m range detection and 3D depth scan up to 20 m using a silicon-photonic optical phased array with integrated amplifiers, promising a highperformance solid-state light-detection and ranging (LiDAR) system.