이호선 교수
Lee Hosun
경희대학교 응용물리학과 · 재료과학
연구실 소개
이호선 교수의 연구실은 광학적 특성 분석을 기반으로 한 펄스형 박막 재료의 전자 구조 및 진동 특성에 대한 정밀한 연구를 수행하고 있습니다. 주로 스펙트로스코픽 엘리프세미메트리, 라만 분광법, 그리고 비틀림 모델링 기반의 비틀림 함수 분석을 통해 페로브스카이트, 나노결정성 탄소, 이황화합물 등 다양한 반도체 및 산화물 박막의 광학적 특성과 결정 구조의 상관관계를 규명하고 있습니다. 특히, 비틀림 함수의 두 번째 도함수를 활용한 임계점 모델링을 통해 밴드 갭 에너지, 궤도 상호작용, 불순물 효과 등을 정량적으로 분석하는 데에 전문성을 기르고 있습니다.
연구 현황
연구 성과 추이
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
주요 논문
15We measure pseudodielectric functions in the visible-deep ultraviolet spectral range of Pb(ZrxTi1−x)O3 (x=0.2,0.56,0.82) (PZT), Pb0.98Nb0.04(Zr0.2Ti0.8)0.96O3, Pb0.91La0.09(Zr0.65Ti0.35)0.98O3, and Pb0.85La0.15Ti0.96O3 films grown on platinized silicon substrates using a sol-gel method and on (0001) sapphire using a radio-frequency sputtering method. Using a parametric optical constant model, we estimate the dielectric functions (ϵ) of the perovskite oxide thin films. Taking the second derivativ
Using spectroscopic ellipsometry and Raman spectroscopy, we measured the pseudodielectric function and the phonon frequencies of fluorinated nanocrystalline carbon (nc-C:F) thin films grown on silicon substrate at varying growth temperature and gas flux ratio of CH4 and CF4. Utilizing the Tauc–Lorentzian formula, we performed multilayer analysis to estimate the dielectric function of the fluorinated nanocrystalline carbon thin films. We also adopted Gaussian-like density-of-states model proposed
We report pseudodielectric function data 〈ε〉=〈ε1〉+i〈ε2〉 of Zn1−xMgxSe and Zn1−xBexSe samples grown on GaAs substrates. The data were obtained from 1.5 to 6.0 eV using spectroscopic ellipsometry. Critical point parameters were obtained by fitting model line shapes to numerically calculated second energy derivatives of 〈ε〉, from which the bowing parameters and spin-orbit-splitting Δ1 of the E1 and E1+Δ1 gaps were obtained. A transfer of oscillator strength from E1+Δ1 to E1 with increasing Mg and B
In this paper, a robust torque control method is proposed for a robot arm which is equipped with joint torque sensor. The proposed controller is used to control the joint torque and make it to be equal with the torque controller reference input torque. A flexible joint robot model will be introduced to model the robot arm system. The disturbance observer scheme is used to reduce the disturbance effects on the system. The PI torque controller is implemented using the characteristics of disturbanc
Abstract Ge 1 − x Te x thin films were grown using thermal coevaporation deposition. The dielectric functions and the phonon modes of amorphous (a‐) and crystalline (c‐) Ge 1 − x Te x films were measured using spectroscopic ellipsometry and Raman spectroscopy in order to investigate electronic and vibrational properties of these alloys. Using the second derivative spectra of the dielectric functions of a‐Ge 1 − x Te x alloys and the standard critical point (SCP) model, we obtained optical transi
We measured pseudodielectric functions in the visible-ultraviolet spectral range of Pb(ZrxTi1−x)O3 (x=0.2, 0.56, 0.82) (PZT) grown on platinized silicon substrate using the sol-gel method and also on (0001) sapphire using radio frequency sputtering method. Using a parametric optical constant model, we estimated the dielectric functions of the PZT thin films. Taking the second derivative of the fitted layer dielectric functions and using the standard critical point model, we determined the parame
The CuPt-type ordering and dopant effects of ${\mathrm{In}}_{0.5}$${\mathrm{Ga}}_{0.5}$P/GaAs epitaxial layers have been studied using spectroscopic ellipsometry and transmission electron microscopy. The degree of ordering was estimated by both transmission electron diffraction and the position of the direct band edge ${E}_{0}$. Conventional line-shape fitting of ${E}_{1}$, ${E}_{1}+{\ensuremath{\Delta}}_{1}$, and ${E}_{0}$ gaps using the second derivative of pseudodielectric functions shows tha
Amorphous gallium/titanium (Ga,Ti) co-doped indium oxide (In2O3) (GTiIO) films present significant potential as transparent conducting electrodes for use in flexible electronic devices. Amorphous GTiIO films were grown on silicon and glass substrates using linear-facing target sputtering and various oxygen flow rates. Transmittance was as high as 80% in the visible range for O2 flow rates of 0.3, 0.7, and 1.0 SCCM. The lowest resistivity was obtained at f(O2) = 0.3 SCCM with 0.47 mΩ cm. Dielectr
The costs of trenchless projects can vary widely with many factors such as the project size, length, depth, location, surface and subsurface conditions, type of application, etc. Although there have been several studies regarding the cost comparison of trenchless with open-cut methods, practical examples of verifying the reasonableness of actual trenchless construction/replacement costs are still needed. In this paper, the cost of an actual pipe bursting project on the campus of Michigan State U
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