최민재 교수

Control over carrier type and doping levels in semiconductor materials is key for optoelectronic applications. In colloidal quantum dots (CQDs), these properties can be tuned by surface chemistry modification, but this has so far been accomplished at the expense of reduced surface passivation and compromised colloidal solubility; this has precluded the realization of advanced architectures such as CQD bulk homojunction solids. Here we introduce a cascade surface modification scheme that overcome

Abstract Na/FeS x batteries have remarkable potential applicability due to their high theoretical capacity and cost‐effectiveness. However, realization of high power‐capability and long‐term cyclability remains a major challenge. Herein, ultrafine Fe 7 S 8 @C nanocrystals (NCs) as a promising anode material for a Na–ion battery that addresses the above two issues simultaneously is reported. An Fe 7 S 8 core with quantum size (≈10 nm) overcomes the kinetic and thermodynamic constraints of the Na‐

Despite the outstanding advantages of a simple structure and cost-effectiveness of solution-based fabrication, Schottky junction quantum dot solar cells (QDSCs) often demonstrate low open-circuit voltage and power conversion efficiency (PCE) due to insufficient band bending at the QD/metal Schottky junction. Generally, this undesirable result stems from the presence of many defects at the QD/metal interface and the consequent Fermi-level pinning effect. Here, we show how the simple oxidation of

III-V colloidal quantum dots (CQDs) are promising semiconducting materials for optoelectronic applications; however, their strong covalent character requires a distinct approach to surface management compared with widely investigated II-VI and IV-VI CQDs-dots, which by contrast are characterized by an ionic nature. Here we show stoichiometric reconstruction in InAs CQDs by ligand exchange. In particular, we find that indium-carboxylate ligands, which passivate as-synthesized InAs CQDs and are re

Abstract Solution‐processed colloidal quantum dots (CQDs) are attractive materials for the realization of low‐cost and efficient optoelectronic devices. Although impressive CQD‐solar‐cell performance has been achieved, the fabrication of CQD films is still limited to laboratory‐scale small areas because of the complicated deposition of CQD inks. Large‐area, uniform deposition of lead sulfide (PbS) CQD inks is successfully realized for photovoltaic device applications by engineering the solute re

Abstract Colloidal quantum dots (CQDs) are of interest for optoelectronic applications owing to their tunable properties and ease of processing. Large‐diameter CQDs offer optical response in the infrared (IR), beyond the bandgap of c‐Si and perovskites. The absorption coefficient of IR CQDs (≈10 4 cm −1 ) entails the need for micrometer‐thick films to maximize the absorption of IR light. This exceeds the thickness compatible with the efficient extraction of photogenerated carriers, a fact that l

The rapid development of electric vehicles has generated a recent demand for high energy density lithium-ion batteries (LIBs). One simple, effective way to enhance energy density of LIBs is to increase the thickness of electrodes. However, the conventional wet process used to fabricate thick electrodes involves the evaporation of large amounts of organic solvents, which causes an inhomogeneous distribution of conductive additives and binders. This weakens the mechanical and electrochemical netwo

The depletion region width of metal-oxide/quantum-dot (QD) heterojunction solar cells is increased by a new method in which heavily boron-doped n(+)-ZnO is employed. It is effectively increased in the QD layer by 30% compared to the counterpart with conventional n-ZnO, and provides 41% and 37% improvement of J(sc) (16.7 mA cm(-2) to 23.5 mA cm(-2) ) and power conversion efficiency (5.52% to 7.55%), respectively.

Three-dimensional optical nanostructures have garnered significant interest in photonics due to their extraordinary capabilities to manipulate the amplitude, phase, and polarization states of light. However, achieving complex three-dimensional optical nanostructures with bottom-up fabrication has remained challenging, despite its nanoscale precision and cost-effectiveness, mainly due to inherent limitations in structural controllability. Here, we report the optical characteristics of intricate t

Abstract 1D perovskite materials are of significant interest to build a new class of nanostructures for electronic and optoelectronic applications. However, the study of colloidal perovskite nanowires (PNWs) lags far behind those of other established perovskite materials such as perovskite quantum dots and perovskite thin films. Herein, a dual‐phase passivation strategy to synthesize all‐inorganic PNWs with minimized surface defects is reported. The local phase transition from CsPbBr 3 to CsPb 2

Quantum dots have attracted significant scientific interest owing to their optoelectronic properties, which are distinct from their bulk counterparts. In order to fully utilize quantum dots for next generation devices with advanced functionalities, it is important to fabricate quantum dot colloids into dry patterns with desired feature sizes and shapes with respect to target applications. In this review, recent progress in ultrahigh-resolution quantum dot patterning technologies will be discusse