장수경 교수
Soo-kyung Chang
연세대학교 물리학과 · 재료과학
연구실 소개
장수경 교수의 연구실은 나노소재의 전기적·광학적 성질을 깊이 있게 탐구하며, 특히 그래핀 옥사이드를 비롯한 2차원 물질과 전이금속 디 chalcogenide의 전자적 거동과 표면 특성을 중심으로 연구를 진행하고 있습니다. 열적 안정성, 결함 제어, 표면 기능화를 통한 선택적 가스 센싱 기술 개발에도 주력하고 있으며, 고해상도 광물성 분석을 기반으로 한 전자기기용 나노소재의 설계 및 최적화를 추구합니다. 특히, 전자 이동 메커니즘과 잡음 메커니즘을 정량적으로 분석함으로써 고성능 트랜지스터 및 센서 소자의 원리적 기반을 마련하고자 합니다.
연구 현황
연구 성과 추이
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
주요 논문
15We have investigated temperature-dependent charge transport behavior in thick reduced graphene oxide (RGO) film. Our results show that charges transport through two parallel percolating conducting pathways. One contains large disordered regions as one of its constituents, so its conductance is determined dominantly by variable range hopping (VRH). The other is composed of small and medium disordered regions and crystalline sp 2 domains, so its conductance is determined by a serial connection of
potential barriers as a function of the gas molecule concentration and devise a fingerprint map of the sensitivity variation corresponding to an individual ratio of two different molecules in a gas mixture. Because the separation of different gas molecule concentrations from gas mixtures is in high demand in the gas-sensing research field, this result will greatly assist in the progress on selective gas sensing.
Various postsynthesis processes for transition metal dichalcogenides have been attempted to control the layer number and defect concentration, on which electrical and optical properties strongly depend. In this work, we monitored changes in the photoluminescence (PL) of molybdenum disulfide (MoS<sub>2</sub>) until laser irradiation generated defects on the sample flake and completely etched it away. Higher laser power was required to etch bilayer MoS<sub>2</sub> compared to monolayer MoS<sub>2</
We investigated the homogeneity and tolerance to heat of monolayer MoS<sub>2</sub> using photoluminescence (PL) spectroscopy.
We have observed magnetic-field-induced charged excitonic transitions from one-side-modulation-doped ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}∕\mathrm{Ga}\mathrm{As}$ asymmetric double quantum wells (ADQWs) where two low-energy conduction subbands e1 and e2 are coupled strongly, whereas the heavy-hole ground state hh1 is localized mostly in a quantum well. In the presence of a magnetic field applied parallel to the growth axis, the photoluminescence spectrum of the e1-hh1 tra
In this report, existing models for low-frequency excess electrical noise in poly-Si thin-lm transistors are scrutinized and a new model is proposed, in particular, for larg-grain poly-crystalline thin-lm transistors. Major noise sources are considered to be located in the grain boundary region, and the grain boundary is modeled as two independent Schottky diodes connected face-to-face. As the gate bias increases, the grain boundary barrier height decreases and the conduction and therefore the n
The temperature-dependent behavior of p-type transparent semiconducting oxide CuAlO2 singlecrystals prepared by using a flux self-removal method in alumina crucibles was investigated throughtransmittance and photoluminescence (PL) measurements at temperatures from 12 K to roomtemperature. The low-temperature (12 K) PL spectrum shows two weak, broad emission peaks,one at 3.52 eV and the other at 3.08 eV, which we assign to excitonic emission and to defectrelatedemission originating from copper va
Cu(In,Ga)Se2 (CIGS) solar cells were fabricated by varying the film thickness of the cracker-ZnS (c-ZnS) buffer layer from 0 nm to 20 nm, and performance was found to depend on c-ZnS film thickness. The best cell efficiency of approximately 8% was obtained from the CIGS solar cell with an 8 nm thick-c-ZnS buffer layer. To investigate the primary factor to determine the cell performance, we utilized the impedance spectroscopy (IS) reflecting interface qualities, and capacitance-voltage (CV) profi
We investigated the temperature and the polarization dependence of the near-band-edge photoluminescence (PL) in non-polar (A-plane) ZnO films on R-plane sapphire grown by using plasma-assisted molecular beam epitaxy. We observed the band-edge emissions from the non-polar ZnO film at 3.449 and 3.386 eV, which were identified as a recombination of free excitons and as excitons bound to neutral donors (D0X) respectively. By analyzing the temperature dependent PL spectra, we attributed the transitio
본 연구는 구성원들의 창의적인 사고가 중요한 뷰티기업에서 구성원들이 유연하게 다양한 지식을 함양할 수 있는 학습지향성 조직문화에 영향을 미치는 조직문화들을 살펴보고자 하였다. 즉, 본 연구에서는 선행연구를 바탕으로 조직들의 공통적인 조직문화인 집단문화, 개발문화, 위계문화, 합리문화 등을 뷰티기업의 조직문화로 보고, 이 조직문화들이 학습지향성이라는 특수한 조직 문화를 구축하여 구성원들의 직무만족 및 조직몰입 등을 내포한 조직유효성에 영향을 미치는지를 살펴보고자 하였다. 이를 위해 뷰티기업인 ‘J’ 계열사인 ‘J뷰티’, ‘(주)J’, ‘J아카데미’, ‘J헤어살롱’ 등에 종사하는 종업원 600명을 대상으로 연구를 진행하였다. 수집된 표본은 SPSS ver 19.0과 AMOS ver 19.0의 통계프로그램을 이용하여, 신뢰성 및 타당성 검증, 상관관계 분석, 구조방정식 모형분석을 통한 가설을 검증하였다. 분석 결과 뷰티기업의 조직문화 중 집단문화, 개발문화 합리문화는 기업의 학습지향성에
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