황성우 교수

Organic transistors with elastic conductors and dielectrics can be stretched up to 250% strain while maintaining the transistor characteristics. Strain-independent properties can be achieved after an initial “programming” cycle that causes the formation of microcracks in the semiconductor. The change in mobility with strain follows the same trend in different stretching directions. Liberating electronic devices from the confines of traditional rigid substrates can improve mechanical robustness a

Abstract The discovery of high-performance functional materials is crucial for overcoming technical issues in modern industries. Extensive efforts have been devoted toward accelerating and facilitating this process, not only experimentally but also from the viewpoint of materials design. Recently, machine learning has attracted considerable attention, as it can provide rational guidelines for efficient material exploration without time-consuming iterations or prior human knowledge. In this regar

Flexible and stretchable optoelectronic devices can be potentially applied in displays, biosensors, biomedicine, robotics, and energy generation. The use of nanomaterials with superior optical properties such as quantum dots (QDs) is important in the realization of wearable displays and biomedical devices, but specific structural design as well as selection of materials should preferentially accompany this technology to realize stretchable forms of these devices. Here, we report stretchable opto

Although triboelectrification is a well-known phenomenon, fundamental understanding of its principle on a material surface has not been studied systematically. Here, we demonstrated that the surface potential, especially the surface dipoles and surface electronic states, governed the triboelectrification by controlling the surface with various electron-donating and -withdrawing functional groups. The functional groups critically affected the surface dipoles and surface electronic states followed

We report metal-free synthesis of high-density single-crystal elementary semiconductor nanowires with tunable electrical conductivities and systematic diameter control with narrow size distributions. Single-crystal silicon and germanium nanowires were synthesized by nucleation on nanocrystalline seeds and subsequent one-dimensional anisotropic growth without using external catalyst. Systematic control of the diameters with tight distribution and tunable doping concentration were realized by adju

Abstract We report color-selective photodetection from intermediate, monolayered, quantum dots buried in between amorphous-oxide semiconductors. The proposed active channel in phototransistors is a hybrid configuration of oxide-quantum dot-oxide layers, where the gate-tunable electrical property of silicon-doped, indium-zinc-oxide layers is incorporated with the color-selective properties of quantum dots. A remarkably high detectivity (8.1 × 10 13 Jones) is obtained, along with three major findi

Two-dimensional (2D) transition metal dichalcogenides (TMDs) have received great attentions because of diverse quantum electronic states such as topological insulating (TI), Weyl semimetallic (WSM) and superconducting states. Recently, the superconducting states emerged in pressurized semimetallic TMDs such as MoTe2 and WTe2 have become one of the central issues due to their predicted WSM states. However, the difficulty in synthetic control of chalcogen vacancies and the ambiguous magneto transp

We herein report the significantly improved thermoelectric performance of n-type Bi₂Te_2.7Se_0.3 polycrystalline bulks through band structure engineering achieved by Au-doping.