최성율 교수

There has been strong demand for novel nonvolatile memory technology for low-cost, large-area, and low-power flexible electronics applications. Resistive memories based on metal oxide thin films have been extensively studied for application as next-generation nonvolatile memory devices. However, although the metal oxide based resistive memories have several advantages, such as good scalability, low-power consumption, and fast switching speed, their application to large-area flexible substrates h

Two-dimensional (2D) molybdenum disulfide (MoS2) has been taken much attention for various applications, such as catalyst, energy storage, and electronics. However, the lack of effective exfoliation methods for obtaining 2D materials in a large quantity has been one of the technical barriers for the real applications. We report a facile liquid-phase exfoliation method to improve the exfoliation efficiency for single-layer MoS2 sheets in 1-methyl-2-pyrrolidinone (NMP) with a sodium hydroxide (NaO

Layered structures of transition metal dichalcogenides stacked by van der Waals interactions are now attracting the attention of many researchers because they have fascinating electronic, optical, thermoelectric, and catalytic properties emerging at the monolayer limit. However, the commonly used methods for preparing monolayers have limitations of low yield and poor extendibility into large-area applications. Herein, we demonstrate the synthesis of large-area MoSe2 with high quality and uniform

Band engineering using the van der Waals heterostructure of two-dimensional materials allows for the realization of high-performance optoelectronic devices by providing an ultrathin and uniform PN junction with sharp band edges. In this study, a highly sensitive photodetector based on the van der Waals heterostructure of WSe₂ and MoS₂ was developed. The MoS₂ was utilized as the channel for a phototransistor, whereas the WSe₂-MoS₂ PN junction

This paper presents a ZnO-CuO p-n heterojunction chemiresistive sensor that comprises CuO hollow nanocubes attached to ZnO spherical cores as active materials. These ZnO-CuO core-hollow cube nanostructures exhibit a remarkable response of 11.14 at 1 ppm acetone and 200 °C, which is a superior result to those reported by other metal-oxide-based sensors. The response can be measured up to 40 ppb, and the limit of detection is estimated as 9 ppb. ZnO-CuO core-hollow cube nanostructures also present

With the advent of artificial intelligence (AI), memristors have received significant interest as a synaptic building block for neuromorphic systems, where each synaptic memristor should operate in an analog fashion, exhibiting multilevel accessible conductance states. Here, we demonstrate that the transition of the operation mode in poly(1,3,5-trivinyl-1,3,5-trimethyl cyclotrisiloxane) (pV3D3)-based flexible memristor from conventional binary to synaptic analog switching can be achieved simply

Abstract Crossbar‐type bipolar resistive memory devices based on low‐temperature amorphous TiO 2 ( a‐ TiO 2 ) thin films are very promising devices for flexible nonvolatile memory applications. However, stable bipolar resistive switching from amorphous TiO 2 thin films has only been achieved for Al metal electrodes that can have severe problems like electromigration and breakdown in real applications and can be a limiting factor for novel applications like transparent electronics. Here, amorphou

Two-dimensional (2D) nanomaterials, such as graphene-based materials and transition metal dichalcogenide (TMD) nanosheets, are promising materials for biomedical applications owing to their remarkable cytocompatibility and physicochemical properties. On the basis of their potent antibacterial properties, 2D materials have potential as antibacterial films, wherein the 2D nanosheets are immobilized on the surface and the bacteria may contact with the basal planes of 2D nanosheets dominantly rather

As the need for super-high-resolution displays with various form factors has increased, it has become necessary to produce high-performance thin-film transistors (TFTs) that enable faster switching and higher current driving of each pixel in the display. Over the past few decades, hydrogenated amorphous silicon (a-Si:H) has been widely utilized as a TFT channel material. More recently, to meet the requirement of new types of displays such as organic light-emitting diode displays, and also to ove

Understanding the phase separation mechanism of solid-state binary compounds induced by laser-material interaction is a challenge because of the complexity of the compound materials and short processing times. Here we present xenon chloride excimer laser-induced melt-mediated phase separation and surface reconstruction of single-crystal silicon carbide and study this process by high-resolution transmission electron microscopy and a time-resolved reflectance method. A single-pulse laser irradiati

In the recent years, transition-metal dichalcogenides such as MoS2 have attracted considerable attention owing to their unique structure and electronic properties. Chemical vapor deposition (CVD) is a popular method for producing MoS2 flakes with different shapes. Here, we report an effective method for achieving a broad range of shape evolution in CVD-grown monolayer MoS2 flakes. By controlling the S and MoO3 temperatures, the shape of the monolayer MoS2 flakes was varied from hexagonal to tria

Abstract High‐entropy alloys (HEAs) provide unprecedented physicochemical properties over unary nanoparticles (NPs). According to the conventional alloying guideline (Hume–Rothery rule), however, only size‐and‐structure similar elements can be mixed, limiting the possible combinations of alloying elements. Recently, it has been reported that based on carbon thermal shocks (CTS) in a vacuum atmosphere at high temperature, ultrafast heating/cooling rates and high‐entropy environment play a critica

An increasing demand for nonvolatile memory has driven extensive research on resistive switching memory because it uses simple structures with high density, fast switching speed, and low power consumption. To improve the storage density, the application of multilevel cells is among the most promising solutions, including three-dimensional cross-point array architectures. Two-dimensional nanomaterials have several advantages as resistive switching media, including flexibility, low cost, and simpl

Resistive random access memory based on polymer thin films has been developed as a promising flexible nonvolatile memory for flexible electronic systems. Memory plays an important role in all modern electronic systems for data storage, processing, and communication; thus, the development of flexible memory is essential for the realization of flexible electronics. However, the existing solution-processed, polymer-based RRAMs have exhibited serious drawbacks in terms of the uniformity, electrical

Abstract Graphene produced by chemical vapor deposition (CVD) has attracted great interest as a transparent conducting material, due to its extraordinary characteristics such as flexibility, optical transparency, and high conductivity, especially in next‐generation displays. Graphene‐based novel electrodes have the potential to satisfy the important factors for high‐performance flexible organic light‐emitting diodes (OLEDs) in terms of sheet resistance, transmittance, work function, and surface