김수영 교수

Since it was first discovered, thousands of years ago, silkworm silk has been known to be an abundant biopolymer with a vast range of attractive properties. The utilization of silk fibroin (SF), the main protein of silkworm silk, has not been limited to the textile industry but has been further extended to various high-tech application areas, including biomaterials for drug delivery systems and tissue engineering. The outstanding mechanical properties of SF, including its facile processability,

The phytohormone abscisic acid (ABA) regulates stress-responsive gene expression during vegetative growth. The ABA regulation of many genes is mediated by a subfamily of basic leucine zipper class transcription factors referred to as ABFs (i.e. ABF1-ABF4), whose transcriptional activity is induced by ABA. Here we show that a calcium-dependent protein kinase is involved in the ABA-dependent activation process. We carried out yeast two-hybrid screens to identify regulatory components of ABF4 funct

Fascinating characteristics of halide perovskites (HPs), which cannot be seen in conventional semiconductors and metal oxides, have boosted the application of HPs in electronic devices beyond optoelectronics such as solar cells, photodetectors, and light-emitting diodes. Here, recent advances in HP-based memory and logic devices such as resistive-switching memories (i.e., resistive random access memory (RRAM) or memristors), transistors, and artificial synapses are reviewed, focusing on inherent

Abstract A chemical approach to controlling the work function of few‐layer graphene is investigated. Graphene films are synthesized on Cu foil by chemical vapor deposition. Six metal chlorides, AuCl 3 , IrCl 3 , MoCl 3 , OsCl 3 , PdCl 2 , and RhCl 3 , are used as dopants. The sheet resistance of the doped graphene decreases from 1100 Ω/sq to ≈500–700 Ω/sq and its transmittance at 550 nm also decreases from 96.7% to 93% for 20 m M AuCl 3 due to the formation of metal particles. The sheet resistan

Abstract Organic–inorganic halide perovskite materials have attracted significant attention during the last few years because of their superior properties for electronic and optoelectronic devices, such as their long charge‐carrier diffusion lengths and high photoluminescence quantum yields of up to 100% with tunable bandgaps over the entire visible spectral range. In addition to solar cells, light‐emitting diodes represent a fascinating application for halide perovskite materials. Here, the rec

Abstract CsPbX 3 (X = halide, Cl, Br, or I) all‐inorganic halide perovskites (IHPs) are regarded as promising functional materials because of their tunable optoelectronic characteristics and superior stability to organic–inorganic hybrid halide perovskites. Herein, nonvolatile resistive switching (RS) memory devices based on all‐inorganic CsPbI 3 perovskite are reported. An air‐stable CsPbI 3 perovskite film with a thickness of only 200 nm is successfully synthesized on a platinum‐coated silicon

Halide perovskites are emerging materials for future optoelectronics and electronics due to their remarkable advantages such as a high light absorption coefficient, long charge carrier diffusion length, facile synthesis method, and low cost.

layer, which, when integrated in an active matrix, can drive the ultrathin OLED display even in dynamic folding states. The proposed architecture exhibits 28 times increase in mobility compared to a normal back-gated thin-film transistor, and its potential as a wearable display attached to a human wrist is demonstrated.

Abstract An electronic nose (e‐nose) is a device that can detect and recognize odors and flavors using a sensor array. It has received considerable interest in the past decade because it is required in several areas such as health care, environmental monitoring, industrial applications, automobile, food storage, and military. However, there are still obstacles in developing a portable e‐nose that can be used for a wide variety of applications. For practical applications of an e‐nose, it is neces

Abstract In recent years, halide perovskites have been attracting intense attention as novel materials for photovoltaic applications due to their high carrier mobility, extraordinarily long carrier diffusion lengths, and suitable optical bandgaps. Furthermore, there are extensive applications of halide perovskites owing to their exceptional attributes in different areas, such as light‐emitting diodes, lasers, X‐ray detectors, memory devices, and more. Here, the unique characteristics of halide p

Wafer-scale n-MoS₂/p-Si photocathodes with high hydrogen evolution reaction activities are demonstrated.

TiO2 has gained tremendous attention as a cutting-edge material for application in photocatalysis. The performance of TiO2 as a photocatalyst depends on various parameters including morphology, surface area, and crystallinity. Although TiO2 has shown good catalytic activity in various catalysis systems, the performance of TiO2 as a photocatalyst is generally limited due to its low conductivity and a wide optical bandgap. Numerous different studies have been devoted to overcome these problems, sh