김태성 교수
Tae Seong Kim
성균관대학교 기계공학부 · 공학
연구실 소개
김태성 교수의 연구실은 나노소재 및 편광성 전자소재를 중심으로, 플라즈마 에너지와 화학기상증착 기반의 저온 합성 기술을 응용하여 웨이퍼 스케일의 유연한 전자소재를 개발하고 있습니다. 특히 모리브덴 디 sulfide(MoS₂)와 흑철(1T) 텅스텐 디 sulfide(WS₂) 등의 2차원 물질을 활용한 고성능 전자 소자 및 전기화학 촉매 소자를 연구하며, 유연한 센서 및 뉴로모픽 컴퓨팅 소자 응용까지 확장하고 있습니다. 이는 차세대 에너지 효율적이고 생체적응성 있는 전자기기 실현을 목표로 하고 있습니다.
연구 현황
연구 성과 추이
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주요 논문
15By plasma-enhanced chemical vapor deposition, a molybdenum disulfide (MoS2 ) thin film is synthesized directly on a wafer-scale plastic substrate at below 300 °C. The carrier mobility of the films is 3.74 cm(2) V(-1) s(-1) . Also, humidity is successfully detected with MoS2 -based sensors fabricated on the flexible substrate, which reveals its potential for flexible sensing devices.
Phosphorus-doped double-layered graphene field-effect transistors (PDGFETs) show much stronger air-stable n-type behavior than nitrogen-doped double-layered graphene FETs (NDGFETs), even under an oxygen atmosphere, due to strong nucleophilicity, which may lead to real applications for air-stable n-type graphene channels.
The structure-viscosity relationship of the low-silica (SiO2 ≤ 10 wt%) calcium aluminosilicate melts, which represent the secondary refining ladle slag systems, was investigated by employing the rotating-cylinder viscosity measurement in conjunction with the Raman spectroscopy measurement for linking the macroscopic thermophysical property and molecular (ionic) structural information. Furthermore, the influence of CaF2 on the structure-property relationship was explored. The viscosity of low-sil
Abstract Brain‐inspired parallel computing is increasingly considered a solution to overcome memory bottlenecks, driven by the surge in data volume. Extensive research has focused on developing memristor arrays, energy‐efficient computing strategies, and varied operational mechanisms for synaptic devices to enable this. However, to realize truly biologically plausible neuromorphic computing, it is essential to consider temporal and spatial aspects of input signals, particularly for systems based
Pleuropulmonary paragonimiasis usually manifests as a subpleural or subfissural nodule of about 2 cm in diameter that frequently contains a necrotic low-attenuation area. The constellation of focal pleural thickening and subpleural linear opacities leading to a necrotic peripheral pulmonary nodule is another frequent CT finding of paragonimiasis. Although minimal and easily overlooked, focal fibrotic pleural thickening adjacent to a pulmonary nodule can be an important clue in the diagnosis of p
Abstract The metallic 1T phase of WS 2 (1T‐WS 2 ), which boosts the charge transfer between the electron source and active edge sites, can be used as an efficient electrocatalyst for the hydrogen evolution reaction (HER). As the semiconductor 2H phase of WS 2 (2H‐WS 2 ) is inherently stable, methods for synthesizing 1T‐WS 2 are limited and complicated. Herein, a uniform wafer‐scale 1T‐WS 2 film is prepared using a plasma‐enhanced chemical vapor deposition (PE‐CVD) system. The growth temperature
Layered molybdenum disulphide was grown at a low-temperature of 350 °C using chemical vapour deposition by elaborately controlling the cluster size. The molybdenum disulphide grown under various sulphur-reaction-gas to molybdenum-precursor partial-pressure ratios were examined. Using spectroscopy and microscopy, the effect of the cluster size on the layered growth was investigated in terms of the morphology, grain size, and impurity incorporation. Triangular single-crystal domains were grown at
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted considerable attention owing to their synergetic effects with other 2D materials, such as graphene and hexagonal boron nitride, in TMD-based heterostructures. Therefore, it is important to understand the physical properties of TMD-TMD vertical heterostructures for their applications in next-generation electronic devices. However, the conventional synthesis process of TMD-TMD heterostructures has some critical limitations
A few-layered molybdenum disulfide (MoS2) thin film grown by plasma enhanced chemical vapor deposition was etched using a CF4 inductively coupled plasma, and the possibility of controlling the MoS2 layer thickness to a monolayer of MoS2 over a large area substrate was investigated. In addition, damage and contamination of the remaining MoS2 layer surface after etching and a possible method for film recovery was also investigated. The results from Raman spectroscopy and atomic force microscopy sh
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