김태호 교수
Tae‐Ho Kim
KAIST 전산학부 · 공학
연구실 소개
김태호 교수의 연구실은 생체의학 및 전자소자 분야에서 혁신적인 기술 개발을 주요 목표로 삼고 있습니다. 특히 생체 신호 모니터링을 위한 유연하고 내구성 있는 센서 기반의 건강 관리 로봇 시스템과, 고성능 페로일렉트릭 소재를 활용한 미세 전자소자 기술 개발에 집중하고 있습니다. 나노구조 재료의 설계 및 특성 제어를 통해 의료용 센서, 태양전지, 메모리 소자 등 응용 분야에 기여하고 있습니다.
연구 현황
연구 성과 추이
표시된 성과는 수집된 데이터 기준으로 산출되며, 일부 차이가 있을 수 있습니다.
주요 논문
15Apoptosis, a programmed process of cell suicide, has been proposed as the most plausible mechanism for the chemopreventive activities of selenocompounds. In our study, we found that Se-methylselenocysteine (MSC) induced apoptosis through caspase activation in human promyelocytic leukemia (HL-60) cells. Measurements of cytotoxicity, DNA fragmentation and apoptotic morphology revealed that MSC was more efficient at inducing apoptosis than selenite, but was less toxic. Moreover, MSC increased both
The effect of high-pressure nitrogen annealing at up to 50 atmospheres (atm) on Hf0.5Zr0.5O2 films at relatively low temperatures (450 °C) is analyzed using polarization-electric field curves, bipolar switching endurance measurements, grazing angle incidence X-ray diffraction, and piezoelectric force microscopy. Hf0.5Zr0.5O2 films annealed at 450 °C/50 atm have excellent characteristics, including remanent polarizations greater than 20 μC/cm2, a switching speed of 200 ns, and reliability, measur
Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (HfZrO) thin-film ferroelectric materials have recently drawn considerable attention due to their attractive properties such as large bandgap (>5 eV), extreme thin thickness ( <in
Abstract In this study, based on inspiration drawn from origami and the suction mechanism of leeches, a dry electrode is developed for reliable blood pressure (BP) monitoring. The leech-inspired suction mechanism generated a local soft vacuum facilitating appropriate contact with the human skin. Subsequently, an electrocardiogram (ECG) sensor, termed a leech-inspired origami (LIO) sensor, was constructed using the developed dry electrode. The LIO with a sensing robot system ensures reliable ECG
Novel TaOx encapsulation was presented to enhance the field-effect mobility (μFE) of ZnON thin-film transistors (TFTs) consisting of a metallic Ta film deposited onto the ZnON surface followed by a modest annealing process. The resulting TaOx/ZnON film stack exhibited a more uniform distribution of nanoscale ZnON crystallites with increased stoichiometric anion lattices compared to the control ZnON film. The control ZnON TFTs exhibited a reasonable μFE, subthreshold gate swing (SS), and ION/OFF
Abstract In this study, cooperative healthcare sensing robots that closely monitor and evaluate the patients’ muscle functions through gait analysis and electromyography (EMG) are developed. By integrating the biological sensors, the sensing robot can recognize the vital signs. The sensing robots are developed by the design and optimization of their architectures and materials using a green strategy. To achieve mechanically durable robot designs, 3D origami structures are used with specific opti
In this paper, we introduce the concept of reliability defect, present the time-dependent defect growth model during operations based on a defect-related gate oxide breakdown mechanism, and build the yield-reliability relation model. Discussions presented here can also be applicable to other device failures when different physics-of-failure mechanisms are found. Through the relation model, it is possible to find a minimum level of latent defect screening to assure the required level of reliabili
Hydrogen plays a crucial role in several oxide semiconductors, where the amount of hydrogen significantly influences the device performance. Thus, its manipulation in oxide semiconductors is important for device performance. In our investigation, we studied the effect of hydrogen on defects in In–Ga–Zn–O semiconductor thin-film transistors (TFTs), as it varies with Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://w
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