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Development of light-emitting diodes (LEDs) based on colloidal quantum dots is driven by attractive properties of these fluorophores such as spectrally narrow, tunable emission and facile processibility via solution-based methods. A current obstacle towards improved LED performance is an incomplete understanding of the roles of extrinsic factors, such as non-radiative recombination at surface defects, versus intrinsic processes, such as multicarrier Auger recombination or electron-hole separatio

We demonstrate a single-step synthetic method for highly luminescent (i.e., quantum yield up to 80%) and stable quantum dots (QDs) by using the reactivity difference between Cd and Zn precursors and that between Se and S precursors. A wide range of emission wavelengths (500−610 nm) with a narrow fwhm (<35 nm) is obtained by changing the ratios of the precursors. Under the reaction conditions selected, Cd- and Se (with a bit of S)-based cores are formed first and Zn- and S-based shells are formed

The influence of a CdSexS1-x interfacial alloyed layer on the photophysical properties of core/shell CdSe/CdS nanocrystal quantum dots (QDs) is investigated by comparing reference QDs with a sharp core/shell interface to alloyed structures with an intermediate CdSexS1-x layer at the core/shell interface. To fully realize the structural contrast, we have developed two novel synthetic approaches: a method for fast CdS-shell growth, which results in an abrupt core/shell boundary (no intentional or

CdSe/Zn1-X CdX S core/shell heterostructured quantum dots (QDs) with varying shell thicknesses are studied as the active material in a series of electroluminescent devices. "Giant" CdSe/Zn1-X CdX S QDs (e.g., CdSe core radius of 2 nm and Zn1-X CdX S shell thickness of 6.3 nm) demonstrate a high device efficiency (peak EQE = 7.4%) and a record-high brightness (>100 000 cd m(-2) ) of deep-red emission, along with improved device stability.

Highly efficient green-light-emitting diodes (LEDs) based on [email protected] quantum dots (QDs) with a chemical-composition gradient are demonstrated. Through the moderate control of QD coverage in multilayered devices, excellent device performance has been achieved. The color-saturated green-light emission (see figure for Commission Internationale de l'Eclairage (CIE) co-ordinates) is mainly from the QD layers (more than 99% of total emission). Detailed facts of importance to specialist reade

Establishing multi-colour patterning technology for colloidal quantum dots is critical for realising high-resolution displays based on the material. Here, we report a solution-based processing method to form patterns of quantum dots using a light-driven ligand crosslinker, ethane-1,2-diyl bis(4-azido-2,3,5,6-tetrafluorobenzoate). The crosslinker with two azide end groups can interlock the ligands of neighbouring quantum dots upon exposure to UV, yielding chemically robust quantum dot films. Expl

PbSe nanocrystal quantum dots (NQDs) are a promising active material for a range of optoelectronic devices, including solar cells, high-sensitivity infrared (IR) photodetectors, and IR-emitting diodes and lasers. However, device realization has been constrained by these NQDs' chemical instability toward oxidation, which leads to uncontrollable changes in optical and electronic properties. Here, we present a simple method to enhance the stability of PbSe NQDs against oxidation and to improve thei

A systematic analysis of the exciton-recombination zone within all-quantum dot (QD) multilayer films prepared by a layer-by-layer assembly method was made, using sensing QD layers in QD-based light-emitting diodes (QLEDs). Large area practical multicolored colloidal QLEDs were also demonstrated by patterning and placing variously colored QDs (red, orange, yellow-green, and green) in the exciton-recombination zone.

Bright, low-voltage driven colloidal quantum dot (QD)-based white light-emitting devices (LEDs) with practicable device performances are enabled by the direct exciton formation within quantum-dot active layers in a hybrid device structure. Detailed device characterization reveals that white-QLEDs can be rationalized as a parallel circuit, in which different QDs are connected through the same set of electrically common organic and inorganic charge transport layers.

We investigate the operational instability of quantum dot (QD)-based light-emitting diodes (QLEDs). Spectroscopic analysis on the QD emissive layer within devices in chorus with the optoelectronic and electrical characteristics of devices discloses that the device efficiency of QLEDs under operation is indeed deteriorated by two main mechanisms. The first is the luminance efficiency drop of the QD emissive layer in the running devices owing to the accumulation of excess electrons in the QDs, whi

We demonstrated a facile synthesis of highly luminescent blue emitting Cd 1− x Zn x S/ZnS core/shell structured nanocrystals (NCs) in straightforward and reproducible manner. The alloyed Cd 1− x Zn x S cores with homogeneity in both size and composition were prepared by introducing S precursors (S dissolved in the noncoordinating solvent (1-octadecene)) into the mixed solution of Cd−Oleate (Cd(OA) 2 ) and Zn−Oleate (Zn(OA) 2 ) at elevated temperature (300 °C). ZnS shells were successively overco

Thick inorganic shells endow colloidal nanocrystals (NCs) with enhanced photochemical stability and suppression of photoluminescence intermittency (also known as blinking). However, the progress of using thick-shell heterostructure NCs in applications has been limited due to the low photoluminescence quantum yield (PL QY ≤ 60%) at room temperature. Here, we demonstrate thick-shell NCs with CdS/CdSe/CdS seed/spherical quantum well/shell (SQW) geometry that exhibit near-unity PL QY at room tempera

Advance in wet chemistry enables the sophisticated design of nanocrystal quantum dots (QDs) and allows unprecedented color purity and brightness, promising their useful applications in a variety of light-emitting applications. A representative example is core/shell heterostructures, in which charge carriers are effectively decoupled from structural artifacts to generate photons efficiently. Despite the development of widely accepted synthetic protocols for Cd- or Pb-based QDs, the progress in he

Colloidal quantum dots (QDs) are nanosized semiconductors whose electronic features are dictated by the quantum confinement effect. The optical, electrical, and chemical properties of QDs are influenced by their dimensions and surface landscape. The surface of II-VI and IV-VI QDs has been extensively explored; however, in-depth investigations on the surface of III-V QDs are still lagging behind. This Perspective discusses the current understanding of the surface of III-V QDs, outlines deep trap