유우종 교수

Concepts of non-volatile memory to replace conventional flash memory have suffered from low material reliability and high off-state current, and the use of a thick, rigid blocking oxide layer in flash memory further restricts vertical scale-up. Here, we report a two-terminal floating gate memory, tunnelling random access memory fabricated by a monolayer MoS2/h-BN/monolayer graphene vertical stack. Our device uses a two-terminal electrode for current flow in the MoS2 channel and simultaneously fo

Abstract Memristors such as phase‐change memory and resistive memory have been proposed to emulate the synaptic activities in neuromorphic systems. However, the low reliability of these types of memories is their biggest challenge for commercialization. Here, a highly reliable memristor array using floating‐gate memory operated by two terminals (source and drain) using van der Waals layered materials is demonstrated. Centimeter‐scale samples (1.5 cm × 1.5 cm) of MoS 2 as a channel and graphene a

Abstract Two-dimensional layered transition-metal dichalcogenides have attracted considerable interest for their unique layer-number-dependent properties. In particular, vertical integration of these two-dimensional crystals to form van der Waals heterostructures can open up a new dimension for the design of functional electronic and optoelectronic devices. Here we report the layer-number-dependent photocurrent generation in graphene/MoS 2 /graphene heterostructures by creating a device with two

The bilayer graphene has attracted considerable attention for potential applications in future electronics and optoelectronics because of the feasibility to tune its band gap with a vertical displacement field to break the inversion symmetry. Surface chemical doping in bilayer graphene can induce an additional offset voltage to fundamentally affect the vertical displacement field and the band gap opening in bilayer graphene. In this study, we investigate the effect of chemical molecular doping o

We report small hysteresis integrated circuits by introducing monolayer graphene for the electrodes and a single-walled carbon nanotube network for the channel. Small hysteresis of the device originates from a defect-free graphene surface, where hysteresis was modulated by oxidation. This uniquely combined nanocarbon material device with transparent and flexible properties shows remarkable device performance; subthreshold voltage of 220 mV decade(-1), operation voltage of less than 5 V, on/off r

Ultra-transparent and flexible non-volatile memory devices fabricated using oxygen-decorated graphene electrodes and carbon nanotube network channels are reported. The fabricated memory device revealed a high transmittance of 83.8% with respect to air (PET transmittance: 87.4%) and excellent mechanical stability in a 1000 times bending test. The ultra transparency was realized by introducing oxygen trap sites onto the graphene surface instead of using an opaque inorganic floating gate layer. Det

A CMOS-like inverter was integrated by using ambipolar carbon nanotube (CNT) transistors without doping. The ambipolar CNT transistors automatically configure themselves to play a role as an n-type or p-type transistor in a logic circuit depending on the supply voltage (V(DD)) and ground. A NOR (NAND) gate is adaptively converted to a NAND (NOR) gate. This adaptiveness of logic gates exhibiting two logic gate functions in a single logic circuit offers a new opportunity for designing logic circui

Vertically stacked two-dimensional van der Waals (vdW) heterostructures, used to obtain homogeneity and band steepness at interfaces, exhibit promising performance for band-to-band tunneling (BTBT) devices. Esaki tunnel diodes based on vdW heterostructures, however, yield poor current density and peak-to-valley ratio, inferior to those of three-dimensional materials. Here, we report the negative differential resistance (NDR) behavior in a WSe₂/SnSe₂ heterostructure system a

van der Waals heterostructures (vdWHs) of metallic (m-) and semiconducting (s-) transition-metal dichalcogenides (TMDs) exhibit an ideal metal/semiconductor (M/S) contact in a field-effect transistor. However, in the current two-step chemical vapor deposition process, the synthesis of m-TMD on pregrown s-TMD contaminates the van der Waals (vdW) interface and hinders the doping of s-TMD. Here, NbSe₂/Nb-doped-WSe₂ metal-doped-semiconductor (M/d-S) vdWHs are created via a one-

Piezoelectricity of transition metal dichalcogenides (TMDs) under mechanical strain has been theoretically and experimentally studied. Powerful strain sensors using Schottky barrier variation in TMD/metal junctions as a result of the strain-induced lattice distortion and associated ion-charge polarization were demonstrated. However, the nearly fixed work function of metal electrodes limits the variation range of a Schottky barrier. We demonstrate a highly sensitive strain sensor using a variable

Abstract Vertical integration of 2D layered materials to form van der Waals heterostructures (vdWHs) offers new functional electronic and optoelectronic devices. However, the mobility in vertical carrier transport in vdWHs of vertical field‐effect transistor (VFET) is not yet investigated in spite of the importance of mobility for the successful application of VFETs in integrated circuits. Here, the mobility in VFET of vdWHs under different drain biases, gate biases, and metal work functions is

Abstract Multi-terminal memristor and memtransistor (MT-MEMs) has successfully performed complex functions of heterosynaptic plasticity in synapse. However, theses MT-MEMs lack the ability to emulate membrane potential of neuron in multiple neuronal connections. Here, we demonstrate multi-neuron connection using a multi-terminal floating-gate memristor (MT-FGMEM). The variable Fermi level ( E F ) in graphene allows charging and discharging of MT-FGMEM using horizontally distant multiple electrod

Two-dimensional (2D) layered materials with properties such as a large surface-to-volume ratio, strong light interaction, and transparency are expected to be used in future optoelectronic applications. Many studies have focused on ways to increase absorption of 2D-layered materials for use in photodetectors. In this work, we demonstrate another strategy for improving photodetector performance using a graphene/MoS₂ heterojunction phototransistor with a short channel length and a tunabl