김영국 교수

We propose and characterize a new Z2 class of topological semimetals with a vanishing spin-orbit interaction. The proposed topological semimetals are characterized by the presence of bulk one-dimensional (1D) Dirac line nodes (DLNs) and two-dimensional (2D) nearly flat surface states, protected by inversion and time-reversal symmetries. We develop the Z2 invariants dictating the presence of DLNs based on parity eigenvalues at the parity-invariant points in reciprocal space. Moreover, using first

A divacancy (DV) is one of the most abundant and most important defects in irradiated graphene, which modifies electronic and chemical properties of graphene. In this paper, we present ab initio calculations to study the dynamics and stability of DVs in graphene. Divacancies in graphene have various reconstructed structures, such as triple pentagon-triple heptagon (555-777) and pentagon-octagon-pentagon (5-8-5) patterns. A direct observation of the structural transformations between these recons

Changes in the electronic structures of Ge2Sb2Te5 (GST) and N-doped Ge2Sb2Te5 film during the phase transition from an amorphous to a crystalline phase were studied using synchrotron radiation high-resolution x-ray photoemission spectroscopy. The changes in tetrahedral and octahedral coordinated Ge 3d peaks are closely related to the changes in the chemical bonding state of GST films. The metallic Sb peak in the Sb 4d spectra of annealed GST films demonstrates that the metallic Sb atoms become s

Silicene is a two-dimensional honeycomb lattice made of silicon atoms, which is considered to be a new Dirac fermion system. Based on first-principles calculations, we examine the possibility of the formation of solitonlike topological domain walls (DWs) in silicene. We show that the DWs between regions of distinct ground states of the buckled geometry should bind electrons when a uniform electric field is applied in the perpendicular direction to the sheet. The topological origin of the electro

One key to improve the performance of advanced optoelectronic devices and energy harvesting in graphene is to understand the predominant carrier scattering <i>via</i> optical phonons. Nevertheless, low light absorbance in graphene yields a limited photoexcited carrier density, hampering the hot carrier effect, which is strongly correlated to the hot optical phonon bottleneck effect as the energy-loss channel. Here, by integrating graphene with monolayer MoS₂ possessing stronger light

Topological crystalline insulators (TCIs) are insulating materials whose topological property relies on generic crystalline symmetries. Based on first-principles calculations, we study a three-dimensional (3D) crystal constructed by stacking two-dimensional TCI layers. Depending on the interlayer interaction, the layered crystal can realize diverse 3D topological phases characterized by two mirror Chern numbers (MCNs) (μ1,μ2) defined on inequivalent mirror-invariant planes in the Brillouin zone.

Abstract Recently, layered kagome metals A V 3 Sb 5 ( A = K, Rb, and Cs) have emerged as a fertile platform for exploring frustrated geometry, correlations, and topology. Here, using first-principles and mean-field calculations, we demonstrate that A V 3 Sb 5 can crystallize in a mono-layered form, revealing a range of properties that render the system unique. Most importantly, the two-dimensional monolayer preserves intrinsically different symmetries from the three-dimensional layered bulk, enf

The phase transitions of Ge2Sb2Te5 (GST) films after bombardment with 40keV N2+ ions were investigated. Comparing the nitrogen incorporated GST films with a pure GST film, the suppression of a crystalline grain growth was more effective in the N2+ implanted GST film than in a nitrogen codeposited GST film, i.e., x-ray diffraction data showed that the intensities of the crystalline diffraction peaks were decreased and the full widths at half maximum were broader than that of a pure GST film. This

We investigated ion acceleration by an electrostatic shock in an exploded target irradiated by an ultrashort, circularly polarized laser pulse by means of one- and three-dimensional particle-in-cell simulations. We discovered that the laser field penetrating via relativistic transparency (RT) rapidly heated the upstream electron plasma to enable the formation of a high-speed electrostatic shock. Owing to the RT-based rapid heating and the fast compression of the initial density spike by a circul

For this study, the phase-change materials Ge2Sb2Te5 and N-doped Ge2Sb2Te5 films were investigated using x-ray absorption near-edge structure and extended x-ray absorption fine structure. During the phase transition, change in electronic structure is observed by the shift of the absorption edge energy, i.e., structural coordination of Ge–Te changes from tetrahedral to octahedral coordination, of which the interatomic distances are 3.12 and 2.83Å, respectively. In addition, nitrogen incorporation

Abstract The Hofstadter energy spectrum of twisted bilayer graphene (TBG) is found to have recursive higher-order topological properties. We demonstrate that higher-order topological insulator (HOTI) phases, characterized by localized corner states, occur as replicas of the original HOTIs to fulfill the self-similarity of the Hofstadter spectrum. We show the existence of exact flux translational symmetry in TBG at all commensurate angles. Based on this result, we identify that the original HOTI

Strain-engineered topological phases in noncentrosymmetric materials offer fertile ground for realizing exotic quantum states, yet their experimental realization remains elusive. Here, using first-principles calculations, we demonstrate that the van der Waals layered material γ-GeSe undergoes a sequence of strain-induced topological phase transitions, including the emergence of a higher-order topological Dirac semimetal phase. Under in-plane biaxial tensile strain, we uncover a sequential evolut