송영재 교수

Direct chemical vapor deposition (CVD) growth of single-layer graphene on CVD-grown hexagonal boron nitride (h-BN) film can suggest a large-scale and high-quality graphene/h-BN film hybrid structure with a defect-free interface. This sequentially grown graphene/h-BN film shows better electronic properties than that of graphene/SiO2 or graphene transferred on h-BN film, and suggests a new promising template for graphene device fabrication.

Two different growth modes of large-area hexagonal boron nitride (h-BN) film, a conventional chemical vapor deposition (CVD) growth mode and a high-pressure CVD growth mode, were compared as a function of the precursor partial pressure. Conventional self-limited CVD growth was obtained below a critical partial pressure of the borazine precursor, whereas a thick h-BN layer (thicker than a critical thickness of 10 nm) was grown beyond a critical partial pressure. An interesting coincidence of a cr

We describe the design, development and performance of a scanning probe microscopy (SPM) facility operating at a base temperature of 10 mK in magnetic fields up to 15 T. The microscope is cooled by a custom designed, fully ultra-high vacuum (UHV) compatible dilution refrigerator (DR) and is capable of in situ tip and sample exchange. Subpicometer stability at the tip-sample junction is achieved through three independent vibration isolation stages and careful design of the dilution refrigerator.

We describe the successful in situ chemical vapor deposition synthesis of a graphene-based heterostructure in which a graphene monolayer is protected by top and bottom boron nitride films. The boron nitride film/graphene monolayer/boron nitride film (BGB) was found to be a mechanically robust and chemically inert heterostructure, from which the deleterious effects of mechanical transfer processes and unwanted chemical doping under air exposure were eliminated. The chemical compositions of each f

Graphene transferred onto h-BN has recently become a focus of research because of its excellent compatibility with large-area device applications. The requirements of scalability and clean fabrication, however, have not yet been satisfactorily addressed. The successful synthesis of graphene/h-BN on a Cu foil and DFT calculations for this system are reported, which demonstrate that a thin h-BN film on Cu foil is an excellent template for the growth of large-area and high-quality graphene. Such ma

The environmental stability of large-sized and single-crystalline antimony flakes was systematically investigated with temperature and time dependence at fixed humidity. The antimony flakes used in this work were grown by chemical vapor deposition (CVD) directly on SiO2 substrates, where antimonene layers were stacked to a few tens of nm thickness with a typical area of ∼40 μm.

Abstract Besides its unprecedented physical and chemical characteristics, graphene is also well known for its formidable potential of being a next-generation device material. Work function (WF) of graphene is a crucial factor in the fabrication of graphene-based electronic devices because it determines the energy band alignment and whether the contact in the interface is Ohmic or Schottky. Tuning of graphene WF, therefore, is strongly demanded in many types of electronic and optoelectronic devic

Correction for 'Controllable poly-crystalline bilayered and multilayered graphene film growth by reciprocal chemical vapor deposition' by Qinke Wu et al., Nanoscale, 2015, 7, 10357-10361.