이종훈 교수

We have fabricated fully released nano-electro-mechanical system (NEMS) cantilevers of various geometries from metallic alloy nanocomposite films. At thicknesses of 4.3 and 20.0 nm, these are the thinnest released metal cantilevers reported in the literature to date. Such device dimensions are very difficult to achieve using conventional metal films. We were able to overcome this limitation by using room-temperature co-sputtering to synthesize nanocomposite alloy films of Al - Mo. A systematic i

In this work, we designed a novel CuO/Al 2 CuO 4 catalyst by a phase and interphase engineering approach, which enables the electrochemical conversion of carbon dioxide to ethylene with ultrahigh activity and selectivity.

Direct imaging of surface molecules and the interfaces between soft and hard materials on functionalized nanoparticles is a great challenge using modern microscopy techniques. We show that graphene, a single atomic layer of sp(2)-bonded carbon atoms, can be employed as an ultrathin support film that enables direct imaging of molecular layers and interfaces in both conventional and atomic-resolution transmission electron microscopy. An atomic-resolution imaging study of the capping layers and int

The tensile fractures of ultrafine-grained (UFG) Al-Mg alloy with a bimodal grain size were investigated at the micro- and macroscale using transmission electron microscopy (TEM), scanning electron microscopy (SEM) equipped with focused ion beam (FIB), and optical microscopy. The nanoscale voids and crack behaviors near the tensile fracture surfaces were revealed in various scale ranges and provided the evidence to determine the underlying tensile deformation and fracture mechanisms associated w

We report that the substrate-free gas-phase graphene synthesis method produces clean and highly ordered graphene sheets that are similar in quality to the graphene obtained through the mechanical exfoliation of highly oriented pyrolytic graphite.

The production of holes by electron beam irradiation in hexagonal boron nitride (hBN), which has a lattice similar to that of graphene, is monitored over time using atomic resolution transmission electron microscopy. The holes appear to be initiated by the formation of a vacancy of boron and grow in a manner that retains an overall triangular shape. The hole growth process involves the formation of single chains of B and N atoms and is accompanied by the ejection of atoms and bundles of atoms al

Abstract High-performance p -type two-dimensional (2D) transistors are fundamental for 2D nanoelectronics. However, the lack of a reliable method for creating high-quality, large-scale p -type 2D semiconductors and a suitable metallization process represents important challenges that need to be addressed for future developments of the field. Here, we report the fabrication of scalable p -type 2D single-crystalline 2H-MoTe 2 transistor arrays with Fermi-level-tuned 1T’-phase semimetal contact ele

Abstract The edge-to-edge connected metal-semiconductor junction (MSJ) for two-dimensional (2D) transistors has the potential to reduce the contact length while improving the performance of the devices. However, typical 2D materials are thermally and chemically unstable, which impedes the reproducible achievement of high-quality edge contacts. Here we present a scalable synthetic strategy to fabricate low-resistance edge contacts to atomic transistors using a thermally stable 2D metal, PtTe 2 .

Monolayer MoS2 nanosheets are potentially useful in optoelectronics, photoelectronics, and nanoelectronics due to their flexibility, mechanical strength, and direct band gap of 1.89 eV. Experimentalists have studied the synthesis of MoS2 using chemical vapor deposition (CVD) methods in an effort to fabricate wafer-scale nanofilms with a high uniformity and continuity for practical electronic applications. In this work, we applied the CVD method to a reaction of MoO3 powder and H2S gas to grow hi

Hexagonal boron nitride (hBN) is an insulating two-dimensional (2D) material with a large bandgap. Although known for its interfacing with other 2D materials and structural similarities to graphene, the potential use of hBN in 2D electronics is limited by its insulating nature. Here, we report atomically sharp twin boundaries at AA'/AB stacking boundaries in chemical vapor deposition-synthesized few-layer hBN. We find that the twin boundary is composed of a 6'6' configuration, showing conducting

The electronic, catalytic, and optical properties of transition metal dichalcogenides (TMDs) are significantly affected by oxidation, and using oxidation to tune the properties of TMDs has been actively explored. In particular, because transition metal oxides (TMOs) are promising hole injection layers, a TMD-TMO heterostructure can be potentially applied as a p-type semiconductor. However, the oxidation of TMDs has not been clearly elucidated because of the structural instability and the extreme